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| ELEN0004-1 | The physics of semiconductor devices
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| Duration : | 30h Th, 30h Pr |
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| Credits/ECTS : |
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| Holder(s) : | Benoît Vanderheyden |
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| Language : | French language |
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| Course contents : | The crystal structure of semiconductors. Energy band diagrams. Doping and extrinsic semiconductors of n and p types. Fermi distribution. Carrier drift in an applied electrical field, Hall effect. Diffusion. Optical absorption, luminescence. Excess-carrier lifetime. Applications to a number of devices: PN junction (at equilibrium, under a forward or a reverse applied bias), transients. Metal-semiconductor junctions. Bipolar junction transistors, field-effect transistors. MOS capacitance. |
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| Course objective : | To present the fundamental principles of the physics of semiconductor electronic devices. |
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| Workshops : | Exercice sessions (solving problems with a teaching assistant). |
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| Organization : | Lectures and exercice sessions are scheduled for the first quadrimester. |
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| Written notes : | Textbook: Streetman, Solid State Electronic Devices (Prentice Hall). A copy of the lecture slides and of the exercice session notes can be purchased at "la Centrale des Cours de l'AEES" (http://www.aees.misc.ulg.ac.be/cdc/ ) or can be consulted by addressing a request to the lecturer. |
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| Assessment : | A written exam with a theory part and an exercice part. |
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| Contacts : | Benoît Vanderheyden, B.Vanderheyden@ulg.ac.be (04/366 26 13) ; Chantal
Collinet, secrétaire, collinet@montefiore.ulg.ac.be (04/366 26 11) |
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| Remarks : | For more information, please consult the web pages
http://www.montefiore.ulg.ac.be/~vdh/elen004.html . |
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