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ELEN0004-1

The physics of semiconductor devices

[ version française ]

Duration :30h Th, 30h Pr
Credits/ECTS :
4th year of the 5 year degree in civil engineering in electricity (electronics)5,5
4th year of the 5 year degree in civil engineering in computer sciences5,5
4th year of the 5 year degree in civil engineering in physics6
Holder(s) :Benoît Vanderheyden
Course contents : The crystal structure of semiconductors. Energy band diagrams. Doping and extrinsic semiconductors of n and p types. Fermi distribution. Carrier drift in an applied electrical field, Hall effect. Diffusion. Optical absorption, luminescence. Excess-carrier lifetime. Applications to a number of devices: PN junction (at equilibrium, under a forward or a reverse applied bias), transients. Metal-semiconductor junctions. Bipolar junction transistors, field-effect transistors. MOS capacitance.
Course objective : To present the fundamental principles of the physics of semiconductor electronic devices.
Workshops : Exercice sessions (solving problems with a teaching assistant).
Organization : Lectures and exercice sessions are scheduled for the first quadrimester.
Written notes : Textbook: Streetman, Solid State Electronic Devices (Prentice Hall). A copy of the lectures' slides and of the exercice sessions' notes can be purchased at "la Centrale des Cours de l'AEES" (http://www.aees.misc.ulg.ac.be/cdc/ ) or can be consulted by addressing a request to the lecturer.
Assessment : A written exam with a theory part and an exercice part.
Contacts : Benoît Vanderheyden, B.Vanderheyden@ulg.ac.be (04/366 26 13) ; Chantal
Collinet, secrétaire, collinet@montefiore.ulg.ac.be (04/366 26 11)
Remarks : or more information, please consult the web pages
http://www.montefiore.ulg.ac.be/~vdh/elen004.html .




ULg : Students and Studies Administration - Academic Affairs
Contact : Monique Marcourt, direction A.E.E.
Date of data : 27/02/2006
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